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采用物理溅射法制备了用于红外(IR)器件中具有良好性能的高纯Pt膜。本文将讨论在Si片上溅射Pt的制作工艺及其PtSi的形成机理。最后给出实验结果和曲线。还要讲述一下金属-半导体(M-S)系统中PtSi-Si接触的结性能,并提出仍存在的一些问题。
High-purity Pt films with good properties for use in infrared (IR) devices were prepared by physical sputtering. This article will discuss the fabrication of Pt sputtered on Si wafers and the formation mechanism of PtSi. Finally, the experimental results and curves are given. Also talk about the junction properties of PtSi-Si contacts in metal-semiconductor (M-S) systems and raise some remaining issues.