论文部分内容阅读
The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.
The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation. The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given. circuit model the device has two poles. One has the relationship with junction capacitance and the DPD’s load, the other with the depth and the doping concentration of the N-well in the DPD. Different depth of the N-well and different area of the DPDs with bandwidth were compared. The analysis results are important to design the high speed DPDs.