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本文研究了在真空退火过程中金属Sn氧化薄膜表面L元素Sn和O的化学性质．利用X射线光电子能谱（XPS）的表面分析方法，发现在金属Sn氧化薄膜的表面上存在大量的吸附氧粒子（O-和）提高真空退火温度，吸附氧粒子的数量增加；同时吸附氧粒子的负电性变弱．当退火温度低于350℃时，吸附氧粒子数量的增加是起因于SnO2→Sn2O3的转变；在这种情况下，可以观察到Sn2O3是相对稳定的金属Sn氧化物，继续提高退火温度，达到400℃时，Sn在金属Sn中的相对含量急剧增大，Sn在金属Sn中相对含量增加的原因与金属Sn的价态Sn3+→Sn0的转变相关在这个转变过程中伴随着O的释放和薄膜表面氧粒子的进一步堆积．与温度低于350℃时的退火条件相比，XPS的测量也发现，在400℃的退火温度下；SnO2相对于Sn2O3反而成为比较稳定的金属Sn氧化物．还讨论了金属Sn氧化薄膜表面上吸附氧粒子的吸附状态以及吸附状态与退火温度的关系．
In this paper, we studied the chemical properties of the elements Sn and O on the surface of metallic Sn oxide films during vacuum annealing. It is found that there are a large number of adsorbed oxygen particles (O-) on the surface of the metal Sn oxidized film to increase the vacuum annealing temperature and increase the number of adsorbed oxygen particles by the surface analysis method of X-ray photoelectron spectroscopy (XPS) The negative electricity becomes weaker. When the annealing temperature is lower than 350 ℃, the increase of the number of adsorbed oxygen particles is caused by the transition of SnO2 → Sn2O3. In this case, it can be observed that Sn2O3 is a relatively stable metal Sn oxide and the annealing temperature is further increased to reach 400 ° C, the relative content of Sn in the metal Sn increases sharply. The reason why the relative content of Sn in the metal Sn increases is related to the transition of the Sn3 + → Sn0 valence state of the metal Sn. In this transition process, the release of O and the film surface Further accumulation of oxygen particles. Compared with the annealing condition at a temperature lower than 350 ° C, the measurement of XPS also found that at an annealing temperature of 400 ° C, SnO2 becomes a relatively stable metal Sn oxide instead of Sn2O3. The adsorption state of the adsorbed oxygen particles on the surface of the metal Sn oxide film and the relationship between the adsorption state and the annealing temperature are also discussed.