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本文介绍了用作图法测量场效应晶体管的噪声参数,用网络分析仪测量散射参数(s参数)的方法。给出了国产WC50型低噪声砷化镓场效应晶体管在C波段的噪声参数及在C、S波段的s参数。用测出的s参数设计的C波段场效应晶体管放大器获得了初步良好的结果。
This paper presents a method for measuring the noise parameters of field-effect transistors by the graph method and measuring the scattering parameters (s-parameters) using a network analyzer. The noise parameters of domestic WC50 type low noise gallium arsenide field effect transistor in C band and the s parameters in C and S band are given. Preliminary results were obtained with C-band FET transistors designed with measured s-parameters.