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今年三月,飞利浦半导体公司专为 最新的1.8GHz无绳电话和蜂窝 电话推出全新系列的高性能低电压硅双极射频晶体管。这种晶体管采用最新开发的双重多晶硅埋层(double-poly buried-layer)工艺,备有小信号和中功率等不同类型,其集电极电流规格适用移动电话射频收发器的各级,包括其低噪声输入放大器、混频器、VCO和射频功率放大器驱动器等。所有的型号都适用3V供电,而且在电源电压低至1V时仍能发挥良好性能。这些晶体管
In March this year, Philips Semiconductors introduced a new line of high-performance, low-voltage silicon bipolar RF transistors for the newest 1.8GHz cordless phones and cellular phones. This transistor uses the newly developed dual-poly buried-layer process with different types of small and medium power and its collector current specifications apply to all levels of mobile phone RF transceivers, including its low Noise input amplifiers, mixers, VCOs and RF power amplifier drivers. All models are suitable for 3V supply and still perform well at supply voltages as low as 1V. These transistors