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The photoluminescence(PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2films fabricated by pulsed laser deposition at 20 K are investigated.The intensity of the 1.54-μm PL from the former is enhanced,but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal.Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2film,providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.
The photoluminescence (PL) characteristics of hybrid β-FeSi2 / Si and pure β-FeSi2films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal.Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2 / Si film is longer than that in pure β-FeSi2 film, supporting evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.