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理论和实验结果1.材料鉴定在光电二极管的制造中,选择Hg_(1-x)Cd_xTe的理论标准为:响应时间、杂质浓度、量子效率和决定适用光谱响应的组分x(CdTe的克分子数)。本节分析n-P和P-n型这两种基本二极管结构的极限频率。分析得出:衬底中少数载流子的渡越时间与迁移率及吸收系数的平方成反比。α=2×10~3厘米~(-1)时,n-P型的 t_r=3.5×10~(-10)秒,P-n型的t_r=60×10~(-9)秒;n-P结器件的渡越时间比P-n结
Theoretical and experimental results 1. Material identification The theoretical criteria for the selection of Hg_ (1-x) Cd_xTe in photodiode fabrication are: response time, impurity concentration, quantum efficiency and the composition of the component x (CdTe number). This section analyzes the limiting frequencies for the two basic diode structures, n-P and P-n. The analysis shows that the transit time of minority carriers in the substrate is inversely proportional to the mobility and the square of the absorption coefficient. When n = 2 × 10 ~ 3cm -1, t_r of nP type is 3.5 × 10 ~ (-10) seconds and t_r of Pn type is 60 × 10 ~ (-9) seconds. The more time than the Pn junction