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用一般反应蒸发法制得的薄膜,都有一定的化学计量成分的偏离,因此,所得的吸收系数和介质损耗就增大。通过电离残留气体,已达到了大大提高反应度。本文介绍一种具有高电流密度区的电离用的放电管结构。此放电管装在钟罩内。电离的气体从管壁内的喷口直接进入高真空区。文中还评述了SiO_2、SiO_xN_y及TiO_2膜的制备参数。在未加热的基片上,制得了SiO_2膜(此膜实际上在低到190毫微米时无吸收)及TiO_2膜,其折射率高达2.3。
The films prepared by the conventional reaction evaporation have a certain deviation from the stoichiometric composition, so the resulting absorption coefficient and dielectric loss increase. By ionizing the residual gas, the reactivity has been greatly increased. This article describes a discharge tube structure for ionization with high current density. This discharge tube installed in the bell jar. Ionized gas enters the high vacuum area directly from the spout in the tube wall. The preparation parameters of SiO_2, SiO_xN_y and TiO_2 films are also reviewed. On an unheated substrate, a SiO 2 film was obtained (this film is virtually non-absorbable at as low as 190 nm) and a TiO 2 film with a refractive index as high as 2.3.