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设计了一种射频电极作为基板支架的射频等离子体化学气相沉积系统.其温度可达700℃,负偏压是可调的.并以沉积的TiN膜的取向为例说明了系统的工作情况.
A radio frequency plasma chemical vapor deposition system with a radio frequency electrode as the substrate support was designed. The temperature was up to 700 ℃ and the negative bias voltage was adjustable. The operation of the system was illustrated by taking the deposited TiN film as an example.