设计了一种新型高性能Class AB开关电流(SI)第一代存储单元电路。电路由对称的电压反转跟随器(FVF)连接Class AB SI存储单元组成,输入级采用电流传输器结构,输出级采用可调共源共栅结构,电路具有误差小、功耗低、性能高等特点。基于此存储单元,设计了延时器和双线性积分器进行验证。电路采用SMIC 0.18μm工艺,在Spectre中进行仿真。结果表明,该存储单元具有较好的性能和应用价值。 A new type of high-performance Class AB switch current (SI) first generation memory cell circuit is designed. The circuit consists of a symmetrical voltage-follower follower (FVF) connected to a Class AB SI memory cell. The input stage adopts a current transmitter structure. The output stage adopts an adjustable cascode structure. The circuit has the advantages of small error, low power consumption and high performance Features. Based on this memory cell, delay timers and bilinear integrators are designed for verification. The circuit uses a SMIC 0.18μm process and is simulated in a Specter. The results show that the memory cell has good performance and application value.