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采用TSMC 0.25μm CMOS工艺,提出了一种基于衬底驱动放大器的高精度带隙基准(BGR)电路。采用衬底驱动技术的放大器,有效地降低了电源电压;通过PTAT2电流产生电路对基准电路进行2阶温度补偿,有效地降低了输出基准电压的温度系数;采用改进型共源共栅输出级电路,很好地改善了电路的电源抑制比(PSRR)。HSPICE仿真结果显示:在2 V供电电压下,输出基准电压为1.261 V,温度系数为8.24×10-6/℃,低频电源抑制比-为91 dB。整体电路功耗为1.37 mW。
A high accuracy bandgap reference (BGR) circuit based on a substrate driver amplifier is proposed using TSMC 0.25μm CMOS process. The amplifier adopting the substrate driving technology effectively reduces the power supply voltage. The second order temperature compensation is performed on the reference circuit through the PTAT2 current generating circuit, which effectively reduces the temperature coefficient of the output reference voltage. The improved cascode output stage circuit , A good improvement of the circuit’s power supply rejection ratio (PSRR). The results of HSPICE simulation show that the output voltage reference is 1.261 V with the temperature coefficient of 8.24 × 10-6 / ℃ and the low-frequency power supply rejection ratio is 91 dB at 2 V supply voltage. Overall circuit power consumption is 1.37 mW.