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The sharp luminescent peaks in Yb and Er-implanted InP,SI-InP,GaAs,and n-GaAs were observed at77K.The peaks at 1.0 and 1.5μm come from(4f)~2F_(5/2)→~2F_(7/2)of Yb~(3+)and ~4I_(13/2)→~4I_(15/2)of Er~(3+),respectively.The optimum luminescent intensities can be obtained from Yb-implanted and Er-implanted sam-ples which were annealed at 800 and 750℃,respectively.A ccording to the analyses of PL and the rocking curveof X-ray double crystal diffraction,the best crystal structure of implanted InP layer has been obtained by an-nealing at 850℃.The interaction between Yb~(3+)and Er~(3+)in the SI-InP has been investigated for the first time.The quenching effect of Yb~(3+)and Er~(3+)with each other has been observed when the doses of Yb and Er-im-planted SI-InP are equal.
The sharp luminescent peaks in Yb and Er-implanted InP, SI-InP, GaAs, and n-GaAs were observed at 77 K. The peaks at 1.0 and 1.5 μm come from (4f) to 2F_ (5/2) → ~ 2F_ / 2) of Yb ~ (3+) and ~ 4I_ (13/2) → ~ 4I_ (15/2) of Er ~ (3 +), respectively.The optimum luminescent intensities can be obtained from Yb-implanted and Er- implanted sam-ples which were annealed at 800 and 750 ° C, respectively. A ccording to the analyzes of PL and the rocking curve of X-ray double crystal diffraction, the best crystal structure of implanted InP layer has been obtained by an-neat at 850 ℃. The interaction between Yb ~ (3+) and Er ~ (3+) in the SI-InP has been investigated for the first time. The quenching effect of Yb ~ (3+) and Er ~ (3+) with each other has been observed when the doses of Yb and Er-im-planted SI-InP are equal.