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通过金属有机物化学气相沉积(MOCVD)设备,在c-Al2O3衬底上生长本征和Cu掺杂ZnO(ZnO∶Cu)薄膜。X射线衍射(XRD)谱观察到未掺杂的ZnO和ZnO∶Cu样品都呈现出较好的c轴择优取向生长。X射线光电子能谱(XPS)表明Cu已掺入到ZnO薄膜中。利用光致发光(PL)测试对本征ZnO和ZnO∶Cu进行室温和低温PL测试,在ZnO∶Cu样品的低温PL谱中观察到一个强度很强、范围很广的蓝紫光发射峰(Blue-violet发射峰,BV发射峰),范围在2.8～3.3 eV之间,又进一步通过变温PL测试发现随着温度的升高,BV发射峰峰位发生红移,且80 K时BV发射峰高能边出现自由电子向受主能级(eA0)的跃迁发光,并计算了Cu受主离化能。
Intrinsic and Cu-doped ZnO (ZnO: Cu) films were grown on a c-Al2O3 substrate by a metal organic chemical vapor deposition (MOCVD) apparatus. X-ray diffraction (XRD) spectra showed that both undoped ZnO and ZnO: Cu samples showed better c-axis preferred orientation growth. X-ray photoelectron spectroscopy (XPS) showed that Cu has been incorporated into the ZnO thin film. At room temperature and low temperature PL test of intrinsic ZnO and ZnO:Cu by photoluminescence (PL) test, a strong and broad blue-violet emission peak was observed in the low-temperature PL spectrum of ZnO: Cu samples. violet emission peak and BV emission peak) in the range of 2.8-3.3 eV. Further, through the temperature-programmed PL test, it was found that the peak emission of BV was red-shifted with increasing temperature, and the emission peak of BV was high at 80 K The transition from free electron to acceptor level (eA0) appears and the acceptor ionization energy of Cu is calculated.