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采用一种新型的照像方法——PD照像法来研制制造半导体器件用的光掩模版。这种光掩模版是以“紫敏蜀”为感光材料、以交联的聚乙烯醇为载体、用汞灯曝光并经物理显影而制得的。已复印出最细条宽1.2——3微米的光掩模版,光刻试验结果,符合要求。最细条宽2.5微米的版已在生产上试用,并作出合格的管蕊。初步进行了精缩照像实验。
A new type of photographic method, the photoplethysmography, is used to develop a photolithographic reticle for the manufacture of semiconductor devices. This photomask plate is based on “purple sensitive Shu” as a photosensitive material, crosslinked polyvinyl alcohol as a carrier, with a mercury lamp exposure and physical development and prepared. Has been photocopying the most detailed strip width of 1.2 - 3 microns photomask version, photolithography test results to meet the requirements. The smallest strip width of 2.5 microns version has been trial production, and to make a qualified tube Rui. A preliminary contracted photographic experiment.