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The Ti electrode was deposited on the(0001) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property.X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM), and atomic force microscopy(AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.
The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the (0001) face of an n-type 4H-SiC substrate by magnetron sputtering. Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X- ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti / 4H-SiC contact.