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Graphene field-effect transistors have been intensively studied.However,in order to fabricate devices with more complicated structures,such as the integration with waveguide and other two-dimensional materials,we need to transfer the exfoliated graphene samples to a target position.Due to the small area of exfoliated graphene and its random distribution,the transfer method requires rather high precision.In this paper,we systematically study a method to selectively transfer mechanically exfoliated graphene samples to a target position with a precision of sub-micrometer.To characterize the doping level of this method,we transfer graphene flakes to pre-patterned metal electrodes,forming graphene field-effect transistors.The hole doping of graphene is calculated to be 2.16×10~(12) cm~(-2).In addition,we fabricate a waveguide-integrated multilayer graphene photodetector to demonstrate the viability and accuracy of this method.A photocurrent as high as 0.4 μA is obtained,corresponding to a photoresponsivity of 0.48 mA/W.The device performs uniformly in nine illumination cycles.
Graphene field-effect transistors have been intensively studied. Host, in order to fabricate devices with more complicated structures, such as the integration with waveguide and other two-dimensional materials, we need to transfer the exfoliated graphene samples to a target position. Due to the small area of exfoliated graphene and its random distribution, the transfer method requires rather high precision.In this paper, we systematically study a method to selectively transfer mechanically exfoliated graphene samples to a target position with a precision of sub-micrometer.To characterize the doping level of this method, we transfer graphene flakes to pre-patterned metal electrodes, forming graphene field-effect transistors. The hole doping of graphene is calculated to be 2.16 × 10 ~ (12) cm ~ 2. we fabricate a waveguide-integrated multilayer graphene photodetector to demonstrate the viability and accuracy of this method. A photocurrent as high as 0.4 μA is obtained, corresponding to a The photoresponsiveness of 0.48 mA / W. The device performs uniformly in nine illumination cycles.