A 10-bit 110 MHz SAR ADC with asynchronous trimming is presented.In this paper,a high linearity sampling switch is used to produce a constant parasitical barrier capacitance which would not change with the range of input signals.As a result,the linearity of the SAR ADC will increase with high linearity sampled signals.Farther more,a high-speed and low-power dynamic comparator is proposed which would reduce the comparison time and save power consumption at the same time compared to existing technology.Additionally,the proposed comparator provides a better performance with the decreasing of power supply.Moreover,a highspeed successive approximation register is exhibited to speed up the conversion time and will reduce about 50%register delay.Lastly,an asynchronous trimming method is provided to make the capacitive-D AC settle up completely instead of using the redundant cycle which would prolong the whole conversion period.This SAR ADC is implemented in 65-nm CMOS technology the core occupies an active area of only 0.025 mm~2 and consumes 1.8 mW.The SAR ADC achieves SFDR > 68 dB and SNDR > 57 dB,resulting in the FOM of 28 f J/conversion-step.From the test results,the presented SAR ADC provides a better FOM compared to previous research and is suitable for a kind of ADC IP in the design SOC. A 10-bit 110 MHz SAR ADC with asynchronous trimming is presented. This paper, a high linearity sampling switch is used to produce a constant parasitical barrier capacitance which would not change with the range of input signals. As a result, the linearity of the SAR ADC will increase with high linearity sampled signals. More high, a high-speed and low-power dynamic comparator is proposed which would reduce the comparison time and save power consumption at the same time compared to existing technology. Additionally, the proposed comparator provides a better performance with the decreasing of power supply. Moreover, a high speed of approximation register is exhibited to speed up the conversion time and will reduce about 50% register delay. Lastly, an asynchronous trimming method is provided to make the capacitive- settle up completely instead of using the redundant cycle which would prolong the whole conversion period. This SAR ADC is implemented in 65-nm CMOS technology the core occu pies an active area of ​​only 0.025 mm ~ 2 and consumes 1.8 mW.The SAR ADC achieves SFDR> 68 dB and SNDR> 57 dB, resulting in the FOM of 28 f J / conversion-step. From the test results, the presented SAR ADC provides a better FOM compared to previous research and is suitable for a kind of ADC IP in the design SOC.