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在理论分析和实验结果的基础上。建立起多晶硅发射区双极晶体管的低温(77K)模型.该模型由于考虑了低温下的多子与少子冻析效应、禁带宽度变窄效应、多晶硅发射区晶体管的发射效率增强效应及注八等器件物理效应.因而能够比较精确地模拟双极晶体管的低温电学性能.
On the basis of theoretical analysis and experimental results. A low temperature (77K) model of polysilicon emitter bipolar transistor is established.Because of the frost effect of multi-sub and minority carrier at low temperature, the narrow bandgap effect of the forbidden band, the enhancement effect of the emission efficiency of the polysilicon emitter transistor and And other device physical effects.Thus it can more accurately simulate the low temperature electrical properties of bipolar transistors.