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设计了一种带硅岛结构的基于SnO2薄膜材料的共面式气体传感器.利用有限元工具对传感器进行了稳态热分析,分析结果表明这种传感器在33.84 mW的功耗下最高温度达到400℃,气敏薄膜上温度分布均匀.详细阐述了传感器的制作过程,过程中总共使用4块掩模版用于光刻工艺.采用溶胶-凝胶法制备了SnO2纳米薄膜作为传感器的气敏元件.对传感器进行了气敏测试,实验结果表明该传感器拥有良好的气敏性能,在300℃下对50×10-6到2 000×10-6氢气的灵敏度逐渐递增,反应时间可控制在10 s以内.
A coplanar gas sensor based on SnO2 thin film with a silicon island structure was designed.The steady state thermal analysis of the sensor was carried out with finite element analysis.The results show that the maximum temperature of this sensor reaches 400 under the power dissipation of 33.84 mW ℃, the temperature distribution of the gas-sensitive film is uniform.The fabrication process of the sensor is described in detail, and a total of four retarders are used in the photolithography process.The SnO2 nano-film was prepared as the gas sensor of the sensor by sol-gel method. The gas sensor was tested, the experimental results show that the sensor has good gas sensitivity, the sensitivity of 50 × 10-6 to 2000 × 10-6 hydrogen gradually increased at 300 ℃, the reaction time can be controlled at 10 s Within.