双掺硅单晶片经热氧化后在其表面能够形成浅而均匀的P-N结.本文研究这类P-N结的基本特性,在耗尽层近似下给出P-N结空间电荷区中电场分布和电势的解析表达式,并讨论分析P-N结的光电特点.研究结果说明:双掺硅P-N结很有可能应用于光电器件、太阳能电池、集成电路和某些特殊器件. The double-doped silicon single crystal wafers can form a shallow and even PN junction on its surface after thermal oxidation.The basic characteristics of this kind of PN junction are studied in this paper, the distribution of electric field and potential in the space charge region of PN junction are given in the depletion layer approximation Analytical expressions and discussing the photoelectric characteristics of the PN junction are discussed.The results show that the dual-doped PN junction is likely to be used in optoelectronic devices, solar cells, integrated circuits and some special devices.