本文提出了一种由氧化钛化硅薄膜制成的新型低压电子注入器。测试了样品的I-V特性、电击穿特性、电容特性和光照下电流的变化。试验证明,该样品在较低的电场强度下有较大的电子流注入二氧化硅绝缘层。借助RBS能谱图、X射线结构分析以及SEM照象,对不同的样品的微观结构进行了研究。 This paper presents a new type of low pressure electron injector made of titania film. The I-V characteristics, electrical breakdown characteristics, capacitance characteristics and the change of current under illumination were tested. Experiments show that the sample has a larger electric current injected into the silicon dioxide insulating layer at a lower electric field strength. The microstructure of different samples was studied by RBS spectroscopy, X-ray structure analysis and SEM image.