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提出一种结合双低温缓冲层和应变超晶格优势的高质量InP-on-GaAs复合衬底制备技术.研究发现LT-InP/LT-GaAs的双低温缓冲层比单一低温InP缓冲层的聚集应变的效果更为显著.并且,双低温缓冲层中的低温GaAs层存在一个最优生长厚度.当低温InP生长厚度一定,低温GaAs层的生长厚度达到优化生长厚度时,LT-InP/LT-GaAs双低温缓冲层能达到调节应变的最佳状态.最后,通过插入InGaP/InP应变超晶格,并且优化其在外延层中的插入位置,得到了高质量的InP-on-GaAs的复合衬底,2μm厚的InP外延层XRD-ω/2θ扫描的半高宽小于200″.
A high-quality InP-on-GaAs composite substrate fabrication technique combining dual cryogenic buffer layer and strained superlattice is proposed. It is found that the double low temperature buffer layer of LT-InP / LT-GaAs is more concentrated than the single low temperature InP buffer layer The effect of strain is more remarkable, and there is an optimal growth thickness for the low-temperature GaAs layer in the dual low-temperature buffer layer.When the thickness of the low-temperature InP growth is constant and the growth thickness of the low-temperature GaAs layer reaches the optimal growth thickness, the LT-InP / LT- GaAs double low temperature buffer layer can reach the best state of adjusting strain.Finally, by inserting InGaP / InP strain superlattice and optimizing its insertion position in the epitaxial layer, a high quality InP-on-GaAs composite liner The half-height width of the 2 μm-thick InP epitaxial layer XRD-ω / 2θ scan is less than 200 ".