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采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.
The high-quality Tm: Y2SiO5 (Tm: YSO) crystal was grown by the medium-frequency inductive pulling method, and the lattice constant and the segregation coefficient of the crystal were measured. The La Polarization axis <010>, D1 and D2, the absorption spectra, fluorescence spectra and fluorescence lifetime were measured at room temperature, and the absorption line width and absorption cross section of the absorption peak were calculated.It was found that compared with other In the direction of polarization, the strong absorption peak appears at 790 nm in D1 direction, and a certain intensity of emission peak appears in the vicinity of 2 μm, the absorption cross section in D1 direction is larger and the fluorescence lifetime is longer. The Tm: YSO crystal is suitable for AlGaAs diode-pumped solid-state lasers will have great potential in the application of 2μm band solid-state lasers.