论文部分内容阅读
采用三元体系半无限扩散偶的高斯方法,求解了SiC/Ti6Al4V复合材料界面反应层中相关元素的扩散系数,计算的浓度分布和实测值一致。碳原子通过反应层的扩散服从间隙扩散机制,硅原子的扩散为空位扩散机制。由于碳扩散的振动能最低并且跃迁距离最短,而供硅扩散的空位不足,碳和硅在反应产物TiCx中具有最小的内禀扩散系数,分别为8.9403×10-16和4.7747×10-16m2·s-1。研究表明,在SiC/Ti6Al4V复合材料界面反应的过程中,反应元素通过反应层TiCx的扩散是一个主要的控制步骤。
The diffusion coefficients of the related elements in the interface reaction layer of SiC / Ti6Al4V composite were solved by Gaussian method of semi-infinite diffusion couple of ternary system. The calculated concentration distribution was consistent with the measured values. The diffusion of carbon atoms through the reaction layer follows the gap diffusion mechanism, and the diffusion of silicon atoms is a vacancy diffusion mechanism. Due to the lowest vibrational energy of carbon diffusion and the shortest transition distance and the lack of vacancy for silicon diffusion, the intrinsic intrinsic diffusion coefficients of carbon and silicon in the reaction product TiCx are 8.9403 × 10-16 and 4.7747 × 10-16m2 · s-1. The results show that diffusion of reactive elements through TiCx layer is a major control step during the interfacial reaction of SiC / Ti6Al4V composites.