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已用高压回流技术在汞压控制到80个大气压的情况下生长了Hg_(1-x)Cd_xTe合金晶体。回流是通过惰性气体的高压和负温度梯度在挥发材料的装料上结合,使装料可以不用高温密封或液体密封而取得的。连续的蒸发和凝聚过程使惰性气体和蒸气物质在气体和蒸气具有同样压力的明确界面处分开。在Hg_(1-x)Cd_xTe晶体生长时,要调节在回流界面处的惰性气体压力以符合于在固化和晶体生长时维持装料化学配比所需要的汞蒸气压。在—高压炉中用这种技术已生长了大直径(达2.5厘米)、x值达0.60的高质量Hg_(1-x)Cd_xTe晶体。在77°K下,在退火n-型Hg_0.80Cd_0.20Te中获得了低于10~(15)厘米~(-3)的载流子浓度和超过10~5厘米~2/伏秒的电子迁移率。用这种n-型材料已制备了8～14微米光谱区的背景限光导红外探测器。用刚生长的In离子注入p-型材料制备了高性能短波长(2～5微米)光伏探测器。
Hg_ (1-x) Cd_xTe alloy crystals have been grown by the high pressure reflow technique with the mercury pressure controlled to 80 atm. Reflux is achieved by the combination of high and negative temperature gradients of inert gas on the charge of the volatile material so that the charge can be obtained without high temperature or liquid seals. The continuous evaporation and condensation process separates the inert gas from the vaporous substance at a well-defined interface where the gas and vapor have the same pressure. During the growth of Hg 1-x Cd x Te crystals, the pressure of the inert gas at the reflow interface is adjusted to meet the mercury vapor pressure required to maintain the charging stoichiometry during curing and crystal growth. In this high-pressure furnace, high-quality Hg 1-x Cd x Te crystals with large diameter (up to 2.5 cm) and x value of 0.60 have been grown by this technique. At 77 ° K, a carrier concentration of less than 10 to (15) cm-3 and electrons in excess of 10 to 5 cm-2 / volt-seconds were obtained in annealed n-type Hg_0.80Cd_0.20Te Mobility. With this n-type material has been prepared in the 8 ~ 14 micron spectral area background light-guided infrared detectors. High-performance short-wavelength (2 to 5 μm) photovoltaic detectors were fabricated by implanting p-type material with newly-grown In ions.