X波段砷化镓场效应晶体管的问世,在装架和封装方面向器件和电路的设计制造者提出了许多问题。本文将叙述器件的封装技术,在混合微带电路中器件是如何装架和封装的,以及在砷,七镓上制作微波集成电路使这些问题可得到解决。器件的封装为了使砷化镓场效应晶体管能工作于微波频段,在晶体管栅上的有源区尺寸必须非常小。若想工作在10千兆赫甚至更高的频率,必须制作栅金属条宽度为1个微米的器件。图1是普莱赛公司制作的X波段砷化镓场效应晶体管的扫描电子显微镜照片。图中的栅条(在两个大面积欧姆接触源和漏压之间的区域)是用电子束光刻制作的。在目前,这种 The advent of X-band gallium arsenide field-effect transistors poses a number of problems for designers and manufacturers of devices and circuits in terms of mounting and packaging. This article will describe the device packaging technology, hybrid microstrip circuits in the device is how to rack and package, as well as in the arsenic, seven gallium on the production of microwave integrated circuits so that these problems can be solved. Device Package In order for the gallium arsenide field effect transistor to operate in the microwave frequency range, the size of the active region on the transistor gate must be very small. If you want to work at frequencies of 10 gigahertz or higher, you have to make devices that have a grid width of 1 micron. Figure 1 is a scanning electron microscope photograph of an X-band gallium arsenide field-effect transistor made by Plessey Corporation. The grids (in the area between the two large area ohmic contact sources and the drain pressure) are made by electron beam lithography. At the moment, this