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在电弧法制备的过程中添加氮气或Ｂ２Ｏ３ 粉末，制备了氮、硼替位式掺杂Ｃ６０ 。硼掺杂和氮掺杂Ｃ６０ 均显示明显的半导体导电特性，且室温电导率比未掺杂Ｃ６０ 薄膜提高１ ～２ 个量级。用共蒸发的方法制备出了硫掺杂Ｃ６０ 薄膜，其电导率～温度曲线中存在一个过渡区，过渡区两侧表现出明显的半导体导电特性，这与掺入Ｃ６０ 薄膜中的硫杂质的存在状态有关。其室温电导率比掺杂前提高４个量级，光致发光也明显增强。另外还报道了用离子注入和射频等离子体辅助真空沉积的方法制备掺杂Ｃ６０ 薄膜的初步结果。
In the process of arc preparation, nitrogen or B2O3 powder was added to prepare nitrogen and boron substitution doping C60. Both boron-doped and nitrogen-doped C60 show obvious semiconducting conductivity, and the conductivity at room temperature is 1 ~ 2 orders of magnitude higher than undoped C60 film. Sulfur-doped C60 films were prepared by co-evaporation. There was a transition zone between the conductivity and temperature curves. The transitional areas showed obvious semiconducting conductivity. This was in contrast to the presence of sulfur impurities in C60 films Status related. The room temperature conductivity than the doping before the increase of 4 orders of magnitude, photoluminescence was also significantly enhanced. In addition, preliminary results on the preparation of doped C60 films by ion implantation and radio frequency plasma-assisted vacuum deposition have also been reported.