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利用反射式高能电子衍射(RHEED)实时监控对InAs衬底进行两步完全脱氧的过程,对比了有低(高)砷等效束流压强保护下采用两步法对InAs衬底缓慢长时间的高温脱氧过程.InAs衬底两步完全脱氧法的第一步为传统的缓慢升温脱氧方法,第二步为高温In束流辅助脱氧方法.衬底高温脱氧的RHEED衍射图样说明了高温In束流辅助脱氧最终完全清除传统的缓慢升温法无法去掉的残留氧化物,通过脱氧完成同质外延生长后的扫描隧道显微镜图像,说明高砷等效束流压强保护下的脱氧方法是可行的;分析了高温In束流能完全清除衬底表面残余In氧化物的原理.
The two-step fully deoxidation of InAs substrate was carried out by using reflection-type high energy electron diffraction (RHEED). Compared with the low (high) arsenic equivalent beam pressure protection, the two-step method was applied to the InAs substrate for a long time High-temperature deoxidation process.InAs substrate two-step complete deoxidation method is the first step of the traditional slow temperature deoxidation method, the second step is a high-temperature In beam assisted deoxidation method.High temperature deoxidation substrate RHEED diffraction pattern illustrates the high-temperature In beam The auxiliary deoxidation finally completely removes the residual oxide that can not be removed by the traditional slow temperature increasing method, and the scanning tunneling microscope image after the homoepitaxy is completed by deoxidization shows that the deoxidation method under the protection of high arsenic equivalent beam pressure is feasible; High-temperature In beam can completely remove the principle of residual In oxide on the substrate surface.