论文部分内容阅读
,Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of u
【机 构】
：
Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of MicroElectronics,Chi
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2016年8期
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