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采用局域注入p型离子和高温推结的方式得到高掺杂p~+区和低掺杂p~-区规律性的浓度梯度变化,研制了新型低阳极发射效率二极管。与常规结构二极管相比,此结构在工艺实现时,制造工艺条件、掩模版数量保持不变,只需设计高掺杂p~+区和低掺杂p~-区层次掩模版图案,即可实现发射极注入效率的自调节,制造成本低;其反向恢复电荷减小了30.4%,反向电流峰值减小了29%,反向电压峰值减小了6.7%,反向恢复时间减小了11%,开关器件的工作损耗降低,折衷性能更加优良;在V_F基本相当的情况下,反向恢复软度特性更优。
The local gradient of concentration gradient of highly doped p ~ + region and low doped p ~ - region was obtained by local implantation of p-type ions and high-temperature push-junctions, and a new low anode emission efficiency diode was developed. Compared with the conventional structure of the diode, the structure in the process of realization, the manufacturing process conditions, the number of reticle remain unchanged, only the design of highly doped p ~ + area and low doped p ~ - layer mask pattern, you can The self-adjusting emitter injection efficiency is low, the manufacturing cost is low, the reverse recovery charge is reduced by 30.4%, the reverse current peak is reduced by 29%, the reverse voltage peak is reduced by 6.7% and the reverse recovery time is reduced 11%, the working loss of the switching device is reduced, and the compromise performance is more excellent. In the case that the V_F is basically equal, the reverse recovery softness characteristic is better.