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用MOCVD方法在GaAs衬底上生长了AlGaInP的本征及掺Si或掺Mg三个样品。用椭偏光谱法测量了样品在室温下可见光区的光学常数 ,并求其介电函数的三级微商谱。用三点比例内插法分析介电函数的三级微商谱 ,精确地得到样品的带隙Eg、Eg+Δ0 以及Eg 以上成对结构跃迁的能量位置 ,并对其结果加以分析。同时与沟道分析等方法相结合对材料的性能进行了鉴定。
The AlGaInP intrinsic and Si-doped or Mg-doped samples were grown on GaAs substrates by MOCVD. The optical constants of the sample in the visible region at room temperature were measured by ellipsometry, and the three-level micro-spectrum of the dielectric function was obtained. The three-level micro-scale of the dielectric function is analyzed by three-point proportional interpolation, and the energy positions of the band gap Eg, Eg + Δ0 and the pair of paired structure transitions of the sample are accurately obtained, and the results are analyzed. At the same time, the method of channel analysis and other methods were combined to identify the performance of the material.