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本文用 PICTS方法配合退火实验对各种 LEC SI-GaAs材料的缺陷进行了测量,对照文献已有的各种结果,分析和讨论了一些缺陷的成因和可能结构.认为其中的W_1 可能是与As_(Ga)有关的 EL3缺陷,W_4为热应力产生的缺陷.P_1 与V_(Ga)有关.在原生富砷样品的PICTS谱中存在负峰N,实验发现它的存在与样品表面状况无关.若考虑该缺陷同时与两种载流子作用,理论计算与实验符合较好.在有些样品中用PICTS方法观察到EL2峰,对于原生样品,发现经快速退火后EL2的体内浓度减小.
In this paper, the defect of the various LEC SI-GaAs materials was measured by PICTS and annealing experiments, and the causes and possible structures of some defects were analyzed and discussed according to the existing results in the literature.It is considered that W_1 may be related to As_ (Ga) -dependent EL3 defects, and W4 is a defect caused by thermal stress.P_1 is related to V_ (Ga) .The negative peak N exists in the PICTS spectrum of native arsenic-rich samples, and its existence has nothing to do with the surface condition of the samples. Considering this defect simultaneously with the two carriers, the theoretical calculation is in good agreement with the experiment.El2 peak was observed by PICTS method in some samples, and the concentration of EL2 in vivo was decreased after the sample was annealed.