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在制造GaAs场效应器件中,单层或双层同性抗蚀剂剥离技术已获得广泛的应用.蒸发金属栅和源漏金属化时,利用SiO_2及抗融剂所形成的阶跃台阶,来达到剥离的目的.但是,在制作较厚的源漏压柄金属层时,由于金属层较厚,斜蒸发和溅射,且只有一层抗蚀剂而没有良好的阶跃台阶,则易出现剥离困难,或剥离边缘不整齐等缺点.对此,剥离技术在硅器件中没有获得广泛的应用.
In the manufacture of GaAs field effect devices, single-layer or double-layer same-sex resist stripping technology has been widely used.Evaporation metal gate and source and drain metallization, the use of SiO 2 and anti-melting agent formed step steps to achieve However, in the manufacture of a thicker source / drain handle metal layer, the metal layer is prone to delamination due to its thicker layer, oblique evaporation and sputtering, and a single resist without good step steps Difficult, or stripped edges are not neat, etc. In this regard, stripping technology has not been widely used in silicon devices.