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半导体器件正以惊人的速度向前发展,新的微波晶体管、大规模集成电路等已经批量生产。随着半导体器件性能的提高,为了使在硅片上刻出的图形更小,要求光刻精度更加严格并需进一步减少光刻缺陷。这就促进了光致抗蚀剂的发展。下面把新的抗蚀剂作一简要介绍。 1.合成胶系光致抗蚀剂在半导体器件光刻时应用的抗蚀剂中,负性橡胶系抗蚀剂有KMER和KTFR。聚肉桂酸乙烯树脂系抗蚀剂有KPR和KPL等。正性的有AZl350等,各种抗蚀剂的性能列于表1。
Semiconductor devices are moving forward at an alarming rate, with new microwave transistors, large scale integrated circuits, and the like already in mass production. With the improvement of the performance of semiconductor devices, in order to make the pattern engraved on the silicon smaller, the lithography precision is more strict and the lithography defect needs to be further reduced. This has facilitated the development of photoresists. The following new resist for a brief introduction. 1. Synthetic plastic photoresist Photoresist in the semiconductor device used in the resist, the negative rubber-based resist KMER and KTFR. Polycinnamic acid resin-based resists include KPR and KPL. Positive AZl350, etc., a variety of resist properties are shown in Table 1.