对开管AsCl_3—Ga—N_2气体输运技术的砷化镓外延生长进行了充分的试验,就其最佳生长条件进行了若干补充讨论。比较了氮气及氢气携带气体中的外延层生长的霍耳迁移率、杂质分布及光致发光研究的结果。若干实验成功地揭示了未掺杂外延层中的残留杂质。发现当制备高纯均匀外延层时,在许多方面本方法优于通常的方法。 The GaAs epitaxial growth of open-tube AsCl_3-Ga-N_2 gas transport technology was fully tested, and some supplementary discussions were made on its optimal growth conditions. Hall effect mobility, impurity distribution and photoluminescence studies of epitaxial layers in nitrogen and hydrogen carriers were compared. Several experiments have successfully revealed the residual impurities in the undoped epitaxial layer. It has been found that in many ways this method outperforms the usual methods when preparing high purity uniform epitaxial layers.