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通过实验,测量了硅结型三极管特性场效应管的栅-漏击穿电压BV_(GD)对栅-源击穿电压BV_(GS)的依赖关系。提出了源串联电阻R_S及沟道宽度2a的非破坏性测量方法,并进行了实际测量。同时,用西泽静电感应晶体管(SIT)概念给出的源串联电阻R_S表达式进行测量计算,发现测得的R_S与实际结果相差很大,且不满足西泽自己提出的三极管特性出现的条件R_S·G_m<<1,而用本文提出的测量方法测得的R_S与实际结果符合得很好。最后,文章还讨论了器件的沟道宽度与饱和压降的关系。
Through experiment, the dependence of the gate-drain breakdown voltage BV_ (GD) on the gate-source breakdown voltage BV_ (GS) was measured. A non-destructive measurement method of the source series resistance R_S and the channel width 2a is proposed, and the actual measurement is carried out. At the same time, we measured and calculated the source series resistance R_S given by the SIT concept and found that the measured R_S is quite different from the actual result, and does not satisfy the condition that the transistor characteristics proposed by Nishizawa appear R_S · G_m << 1, but the R_S measured by the method proposed in this paper is in good agreement with the actual results. Finally, the article also discusses the relationship between the device channel width and saturation voltage drop.