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采用反应溅射方法制备了氮化碳薄膜，研究了反应气体压力、溅射功率对薄膜形成的影响，并用Ｘ射线电子能谱（ＸＰＳ） 和富里叶变换红外光谱（ＦＴＩＲ）对样品的电子结构进行了分析．结果表明：反应气体Ｎ２ 的压力太高或太低、溅射功率太大或太小，均不利于氮化碳膜的形成；在Ｎ２ 压力为８ Ｐａ、溅射功率为２００ Ｗ 时，薄膜的氮原子数分数得到最大值４１％ ；ＸＰＳ和ＦＴＩＲ分析结果揭示了膜中没有自由的Ｎ原子，所有的Ｎ原子均与Ｃ原子作用形成化学键，而且Ｃ Ｎ 单键、Ｃ Ｎ 双键、Ｃ Ｎ 三键共存．膜中Ｃ Ｈ 和Ｎ Ｈ 振动模式的存在，说明沉积在Ｓｉ 衬底上的氮化碳薄膜有较强的从空气中吸收氢的能力．
The carbon nitride films were prepared by reactive sputtering. The effect of reaction gas pressure and sputtering power on the formation of thin films was studied. The electronic structures of the samples were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) Analyzed. The results show that the pressure of reaction gas N2 is too high or too low, the sputtering power is too large or too small, which is unfavorable to the formation of carbon nitride film. When N2 pressure is 8 Pa and sputtering power is 200 W, The results of XPS and FTIR analysis revealed that there were no free N atoms in the film. All N atoms formed chemical bonds with the C atoms, and the C N single bond, C N double bond, C N Three keys coexist. The presence of the C H and N H modes in the film indicates that the carbon nitride film deposited on the Si substrate has a strong ability to absorb hydrogen from the air.