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电荷耦合的概念简单而又极其实用,是以电荷包在金属-氧化物-半导体(MOS)结构中的转移为基础的。将简单的电荷耦合器件(CCD)与各种模拟形式结合起来,可以发展成多样化的器件,在红外探测和成象方面,采用电荷耦合器件及其有关的器件,最初引入大面积的探测器阵列是显著改进灵敏度和分辨率的关键。此外,通过这种改进,可以降低电、热损耗,减小体积和重量等。本文评述红外敏感的电荷耦合器件(即IRCCD)的物理特性及工作原理。IRCCD可分为单片器件和混合器件两大类。单片器件的红外敏感衬底可以是窄带半导体,也可以是有适宜杂质电离能级的非本征半导体;混合器件则由选取的各种红外探测器耦合硅标准CCD而
The concept of charge-coupled simple and extremely practical, is based on the charge packet in the metal - oxide - semiconductor (MOS) structure of the transfer. The combination of a simple charge-coupled device (CCD) with a variety of analog forms can be developed into a wide range of devices. For infrared detection and imaging, charge-coupled devices and their associated devices are used. Initially large-area detectors Arrays are the key to dramatically improving sensitivity and resolution. In addition, with this improvement, electricity, heat loss, volume and weight can be reduced. This article reviews the physical properties and working principle of infrared-sensitive charge-coupled devices (IRCCDs). IRCCD can be divided into two categories of single-chip devices and hybrid devices. The infrared-sensitive substrate of the monolithic device can be a narrow-band semiconductor or an extrinsic semiconductor with an appropriate impurity ionization level; the hybrid device is coupled to a silicon standard CCD by a variety of infrared detectors selected,