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Silicon nano-wires (SiNWs) and boron nitride nano-tubules (BN-NTs) were successfully synthesized by excimer laser ablation at high temperature. These one-dimensional nano-materials synthesized by this method have a very high yield, a uniform diameter distribution, and a high purity. Micro-structures of these nano-materials were investigated by transmission electron microscopy (TEM). The SiNWs have a high density of structural defects of microtwin, stacking faults, and low-angle boundary, which ere closely related to the formation of SiNWs and the determination of morphology of the nano-wires. BN-NTs ere mainly single atomic-layered and the outer surface of tubules is clean without any attachment. The formation of single atomic-layered tubule is attributed to the catalyst effect which makes the axial rate of BN-NTs much higher than the radial growth.
Silicon-wires (SiNWs) and boron nitride nano-tubules (BN-NTs) were successfully synthesized by excimer laser ablation at high temperature. These one-dimensional nano-materials synthesized by this method have a very high yield, a uniform diameter distribution , and a high purity. Micro-structures of these nano-materials were investigated by transmission electron microscopy (TEM). The SiNWs have a high density of structural defects of microtwin, stacking faults, and low-angle boundary, which ere closely related to the formation of single atomic-layered tubule is attributed to the catalyst effect which makes the axial rate of BN-NTs much higher than the radial growth.