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叙述了p沟道Ge_xSi_(1-x)/Si反型基区晶体管(BICFET)的制备、材料特性以及电特性。BICFET是最早采用先进的Ge_xSi_(1-x)/Si制作工艺的双极晶体管,其p沟道的实现是极为理想的。目前,Ge_xSi_(1-x)/Si BICFET的特性受当前制备工艺限制,而不受其物理原理的限制。这里给出的电特性包括单极特性——BICFET作为异质结FET,以及和双极特性——作为期望的高特性工作模式。参考文献[3]中详细介绍了Ge_xSi_(1-x)/Si BICFET器件的特性和理论模型。本文给出的实验结果与理论研究相当一致。
The preparation, material properties and electrical properties of a p-channel Ge_xSi_ (1-x) / Si trans-base transistor (BICFET) are described. BICFET is the earliest bipolar transistor with advanced Ge_xSi_ (1-x) / Si fabrication process, and its p-channel implementation is extremely desirable. At present, the characteristics of the Ge_xSi_ (1-x) / Si BICFET are limited by the current preparation process, and are not limited by their physical principles. The electrical characteristics given here include unipolar characteristics - the BICFET as a heterojunction FET, and the bipolar characteristic - as the desired high characteristic operating mode. The characteristics and theoretical models of Ge_xSi_ (1-x) / Si BICFETs are detailed in reference [3]. The experimental results presented in this paper are quite consistent with the theoretical research.