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本文描述了制备Hg—n-GaP表面势垒结构的工艺方法。采取真空(2×10~(-4)乇)烘烤(120℃)GaP晶体的方法,消除了样品表面吸附的水分子和其它沾污。研究了肖特基二极管负偏压的容压特性,从它求得扩散电势等于1.26±0.06伏特。势垒高度测定值(φ_b=1.3(±0.06电子伏特)基本上符合于按文献经验公式的计算值;因而,按本文的工艺方法可以准确测定GaP晶体中浅施主杂质浓度。为了简化实验数据的处理,建议在一定负偏压下测量恒定面积的肖特基二极管的电容值来测定浅施主杂质浓度。
This article describes the preparation of Hg-n-GaP surface barrier technology process. A vacuum (2 × 10 -4 Torr) baking (120 ° C) GaP crystal method eliminates the adsorption of water molecules and other contaminants on the sample surface. The capacitance-voltage characteristics of a Schottky diode with a negative bias were studied, from which the diffusion potential equals 1.26 ± 0.06 volts. The measured value of the barrier height (φ_b = 1.3 (± 0.06 electron volts) basically complies with the calculated value according to literature empirical formula; therefore, the shallow donor impurity concentration in the GaP crystal can be accurately measured according to the process of this article. In order to simplify the experimental data For processing, it is recommended to measure the shallow donor impurity concentration by measuring the capacitance of a constant area Schottky diode under a negative bias.