Berkeley实验室的研究人员在Si衬底上采用氮化铪(H_fN)中间层生长出优良结构和光学质量的GaN膜。这些研究人员还建立了在Si上淀积H_fN和在H_fN上淀积GaN的工艺参数。用Si衬底而不用蓝宝石衬底来生长GaN提供了很大的成本优势,并提供了GaN基器件与常规Si电子器件单片集成的可能性。 Researchers at Berkeley Labs used a hafnium nitride (HfN) interlayer on a Si substrate to grow a GaN film of good structure and optical quality. These researchers also established process parameters for depositing H_fN on Si and depositing GaN on H_fN. The growth of GaN with a Si substrate without a sapphire substrate provides great cost advantages and offers the possibility of monolithic integration of GaN-based devices with conventional Si electronics.