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结合单晶硅各向异性腐蚀和倾斜光刻技术,在14°斜切(110)单晶硅片上成功制作出90°顶角的中阶梯光栅。在1500~1600nm波段对其进行了闪耀级次衍射效率测量,测量结果的趋势与C方法计算结果基本吻合,其中在1500~1550nm波段光栅表现出良好的闪耀特性,效率为理论值的52%~75%,峰值约为58%。讨论并计算了制作工艺中的槽深误差对光栅闪耀级次衍射效率的影响。结果表明,在1500~1550nm波段,考虑槽深误差计算所得的理论闪耀级次衍射效率约为完美槽形计算效率的77%~85%。
Combined with monocrystalline anisotropic etching and oblique photolithography, a middle-stepped grating with a 90 ° apex was successfully fabricated on a 14 ° beveled (110) monocrystalline silicon wafer. In the 1500-1600 nm band, the diffraction efficiency of the blazed grading was measured. The trend of the measured results is in good agreement with the calculated results of the C method. In the 1500-1550 nm band, the gratings exhibit good blazing properties with an efficiency of 52% 75%, the peak is about 58%. The influence of groove depth error in the fabrication process on the diffraction efficiency of the grating blaze is discussed and calculated. The results show that the theoretical blazed diffraction efficiency calculated by considering the groove depth error is about 77% -85% of the perfect groove calculation efficiency in the wavelength range of 1500-1550 nm.