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我们已经研究了在使用冗余技术的MOS存储器中可用作程序单元的多晶硅n~+p-n~-结构。这器件采用可形成稳定熔丝的电流限制脉冲编程。由于通过熔丝掺杂物或铝的徒动而使电阻降低。掺杂物徒动产生很快,仅需要几个短脉冲,当采用单个长脉冲时,可实现对铝徒动的控制。在这两种情况下,编程所需要的电流比相同尺寸的电阻熔丝所需的电流要低些,并且不需要去除钝化玻璃。 熔丝的宽度可从编程器件的照片直接测量。我们把测量的熔丝宽度同早期研究的模型所预计的结果进行了比较,两者符合得很好。
We have studied polysilicon n ~ + p-n ~ - structures that can be used as program elements in MOS memories that use redundancy techniques. This device is programmed with a current-limited pulse that forms a stable fuse. The resistance is reduced by the drowsiness of the fuse dopant or aluminum. The dopant produces very fast vibrations, requiring only a few short pulses, and when using a single long pulse, the control of aluminum motion can be achieved. In both cases, the current required for programming is lower than the current required for a resistor fuse of the same size, and there is no need to remove the passivated glass. The width of the fuse can be measured directly from the picture of the programming device. We compared the measured fuse width with the results predicted by the earlier model, which fits well.