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早在Hg_(1-x)Cd_xTe器件的基本性能被充分了解之前,它们就已广泛地作为实际探测器使用。必须进一步研究的课题中有Hg_(1-x)Cd_xTe的缺陷结构和掺杂剂性能。在n型Hg_(1-x)Cd_xTe器件中常用锢形成蒸发欧姆接触。它也可如同对CdTe所作那样在生长时导入Hg_(1-x)Cd_xTe晶格以控制生成态晶体的电导率。资料〔4〕作者发现,铟是一种金属亚晶格替代式施主和快速扩散体。在器件加工和制备的低温退火循环时,接触中的铟就扩散进入晶格。形成了浓度梯度和
Long before the basic properties of Hg_ (1-x) Cd_xTe devices were well understood, they were widely used as real detectors. Defective structures and dopant properties of Hg_ (1-x) Cd_xTe have to be further studied. In the n-type Hg_ (1-x) Cd_xTe devices are commonly used to form an evaporated ohmic contact. It can also introduce Hg_ (1-x) Cd_xTe lattices to control the conductivity of the as-grown crystals as they did for CdTe. Data [4] The authors found that indium is a metal sub-lattice alternative donor and rapid diffusion. Indium in contact diffuses into the crystal lattice during the low-temperature annealing cycle of device fabrication and fabrication. A concentration gradient is formed