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磷锗锌(ZnGeP_2)单晶体是一种性能优异的红外非线性光学晶体材料,被广泛应用于各种先进的光学器件。研究ZnGeP_2晶体的生长方法,对低成本制备大体积、高质量的ZnGeP_2晶体具有重要意义。介绍了ZnGeP_2晶体的结构和应用领域,给出了ZnGeP_2多晶合成与单晶生长技术研究发展的最新动态,并基于晶体生长原理以及生长条件控制方法的差异,综述了水平温度梯度冷凝(HGF)法、液封提拉(LEC)法、高压气相(HPVT)法和垂直布里奇曼(VB)法4种主要的ZnGeP_2单晶体生长方法的优缺点;重点阐述了较成熟的HGF和VB法生长ZnGeP_2晶体的影响因素和研究进展,提出了ZnGeP_2单晶制备技术存在的主要问题和今后的发展方向。
ZnGeP 2 single crystal is a kind of infrared non-linear optical crystal material with excellent performance. It is widely used in various advanced optics. The study of ZnGeP 2 crystal growth method is of great significance for low-cost preparation of large-volume, high-quality ZnGeP 2 crystals. In this paper, the structure and application of ZnGeP 2 crystals are introduced. The recent developments of ZnGeP 2 polycrystal synthesis and single crystal growth technology are presented. Based on the crystal growth principle and the difference of growth condition control methods, the effects of horizontal temperature gradient condensation (HGF) (LEC) method, high pressure gas phase (HPVT) method and vertical Bridgman (VB) method. The emphasis is put on the growth of more mature HGF and VB methods ZnGeP 2 crystal and its research progress, the main problems existing in the preparation of ZnGeP 2 single crystal and its future development are proposed.