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一种多步生长方法应用于GaAs衬底上的InxGa1-xAs缓冲层的MOCVD生长．在这种InxGa1-xAs缓冲层上生长的InyGa1-yAs／AlzGa1-zAs／GaAs／AlzGa1-xAs双垫垒量子阱材料表现出了很好的晶格特性和光学性质．超晶格的室温光伏谱中出现很强的22H高阶机制吸收峰，表明超晶格界面质量很好．主要应用X射线双晶衍射方法，给出了样品中各层的应变状态．据此，合理地解释了样品的光学测试结果．
A Multi-step Growth Method for MOCVD Growth of InxGa1-xAs Buffer Layers on GaAs Substrates. InyGa1-yAs / AlzGa1-zAs / GaAs / AlzGa1-xAs double-barrier quantum well materials grown on this InxGa1-xAs buffer layer exhibit good lattice and optical properties. The strong 22H high-order mechanism absorption peak appears in the room temperature photovoltaic spectrum of the superlattice, indicating that the superlattice interface is of good quality. The main application of X-ray double crystal diffraction method, given the sample strain state. Accordingly, the optical test results of the samples are reasonably explained.