论文部分内容阅读
本文研究了具有极薄(<0.4μm)半导体衬底的MOS电极的高频下的微分电容特性,推导了电场、微分空间电荷电容以及栅电压的模型方程,并给出了极值求解。由电容-电压特性看出,耗尽层的形成受到衬底厚度的限制;少数载流子在形成耗尽层所对应的电势区方面是无贡献的。并发现在一定范围的栅压值上可同时存在反型层和耗尽层,这一结论在电化学系统中MOS电极的实际应用情况下是相对掺杂程度,氧化层和衬底厚度而言的。
In this paper, the differential capacitance characteristics of MOS electrodes with very thin (<0.4μm) semiconductor substrates at high frequencies are studied. The model equations of the electric field, differential space charge capacitance and gate voltage are deduced and the extremum solutions are given. As seen from the capacitance-voltage characteristics, the formation of the depletion layer is limited by the thickness of the substrate; the minority carriers do not contribute to the formation of the potential region corresponding to the depletion layer. And found that inversion and depletion layers can exist simultaneously over a range of gate voltage values. This conclusion is true for the practical application of MOS electrodes in electrochemical systems with respect to the degree of doping, oxide layer and substrate thickness .