本文讨论了红外CCD应用在高性能热象仪中的若干可能的系统方案,所涉及到的范围由反射镜扫描方块器件到大型“凝视”列阵。综述了红外CCD的某些可能的制造工艺,其中包括单块非本征硅器件、单块肖特基位垒器件、InSb CID和CCD、热电—硅混合器件和窄禁带半导体—硅混合式器件。对于工作温度给予了一定的强调,并估算了各种系统和制造工艺的温度上限。 This article discusses several possible system solutions for infrared CCD applications in high-performance thermal imaging instruments, ranging from mirror-scanning block devices to large “gazing” arrays. Some possible fabrication processes for infrared CCDs are reviewed, including single bulk extrinsic silicon devices, monolithic Schottky barrier devices, InSb CIDs and CCDs, thermoelectric silicon hybrid devices, and narrow bandgap semiconductor-silicon hybrids Device. Some emphasis has been placed on the operating temperature and the temperature caps for various systems and manufacturing processes have been estimated.