【摘 要】
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InGaN is a commonly used compound semiconductor.Its unique properties such as high absorption coefficient,high mobility,and tunable energy gap indicate its pote
【机 构】
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State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of
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InGaN is a commonly used compound semiconductor.Its unique properties such as high absorption coefficient,high mobility,and tunable energy gap indicate its potential applications in photovoltaic and other optoelectronic devices.[1-3] However,the InGaN alloy also poses some challenges.For instance,the growth temperature of the p-GaN layer is much higher than that of the InGaN layer,which leads to a relaxation or phase segregation of InGaN.[4,5] Moreover,due to the large lattice mismatch between the InN and GaN layers,a high density of threading dislocations usually appear in the growth of the InGaN/GaN layers.[6,7] These structural defects can act as recombination centers for the photo-generated carriers,causing a low carrier lifetime and a low conversion efficiency of the solar cells.
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